Improvement microwave dielectric properties of Zn2SnO4 ceramics by substituting Sn4+ with Si4+ |
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| Authors: | Yih-Chien Chen Chien-Fang Su Min-Zhe Weng Hong-Mine You Kuang-Chiung Chang |
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| Affiliation: | 1. Department of Electrical Engineering, Lunghwa University of Science and Technology, Gueishan Shiang, Taoyuan County, Taiwan
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| Abstract: | The microwave dielectric properties of Zn2(Sn(1?x)Six)O4 ceramics were examined with a view to their exploitation for mobile communication. The Zn2(Sn(1?x)Six)O4 ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the Zn2(Sn(1?x)Six)O4 ceramics revealed no significant variation of phase with sintering temperatures. A maximum density of 6.24 g/cm3 was obtained for Zn2(Sn0.93Si0.07)O4 ceramic, sintered at 1,175 °C for 4 h. Dielectric constant (? r ) of 8.12, quality factor (Q × f) of 55,500 GHz, and temperature coefficient of resonant frequency (τ f ) of ?119.3 ppm/°C were obtained for Zn2(Sn0.93Si0.07)O4 ceramics that were sintered at 1,175 °C for 4 h. |
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