Microanalytical investigation of sintered SiC

UHV-fracture surfaces of different (B, C)- and (Al, C)-doped pressureless sintered SiC materials are investigated by using high resolution Auger electron spectroscopy (HRAES). The grain boundaries at intergranular fractured regions of (B, C)-doped materials are evidently free of any enrichment of impurity elements or sintering additives. In contrast, the (Al, C)-doped materials reveal the existence of thin Al-containing grain boundary films. Sputtering indicates their thickness to be less than 1 nm. The concentrations of the elements segregated in the grain boundary films are determined.