Electrical conductivity of Sc2O3-ZrO2 compositions by 4-probe d.c. and 2-probe complex impedance techniques |
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Authors: | S. P. S. Badwal |
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Affiliation: | 1. CSIRO Division of Materials Science, Advanced Materials Laboratory, PO Box 4331, 3001, Melbourne, Victoria, Australia
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Abstract: | The ionic conductivities of several samples in the Sc2O3-ZrO2 system (Sc2O3: ~ 8 mol %) have been measured using 4-probe d.c. and 2-probe complex impedance dispersion techniques. Samples which contained monoclinic zirconia showed hysteresis effects and S-shaped Arrhenius conductivity plots. This behaviour was assigned to the m-ZrO2 ? t-ZrO2 transformation. In samples which were free of monoclinic ZrO2, contributions from the grain boundary resistance were relatively small. The Arrhenius plots of their conductivity showed a distinct change in the slope around 600° C towards higher activation energy and this was attributed to vacancy trapping. The 4-probe d.c. data could be fitted to an equation of the formρ=A 1 T exp (E 1/RT)+A 2 T exp (E 2/RT). The process which dominated the conduction mechanism at lower temperatures had an activation energy of 130 to 140 kJ mol?1. The activation energy for the migration of oxygen ion vacancies within the bulk of the grain was 64 to 70 kJ mol?1. |
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