| Nano-Structure Observed in Highly Doped Silicon Crystalline |
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| 作者单位： | Zhiheng LU Department of Physics，Beijing Normal University，Beijing，100875，ChinaDachan WANG Yan LUO Institute of Low Energy Nuclear Physics，Beijing Normal University，Beijing，100875，China |
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| 摘 要： | It was reported that due to the non-linear electrical phenomena,the super-saturated arsenic insilicon single crystalline precipitates during post processing at low temperatures to form differentstructures.The structure with spatial period of 1.7 to 2.3 nm was observed firstly by TEM on thesample.
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| 收稿时间： | 1993-05-28 |
Nano-Structure Observed in Highly Doped Silicon Crystalline |
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| Zhiheng LU. Nano-Structure Observed in Highly Doped Silicon Crystalline[J]. Journal of Materials Science & Technology, 1993, 9(3): 232-234 |
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| Authors: | Zhiheng LU |
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| Affiliation: | Zhiheng LU Department of Physics,Beijing Normal University,Beijing,,ChinaDachan WANG Yan LUO Institute of Low Energy Nuclear Physics,Beijing Normal University,Beijing,,China |
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| Abstract: | It was reported that due to the non-linear electrical phenomena,the super-saturated arsenic in silicon single crystalline precipitates during post processing at low temperatures to form different structures.The structure with spatial period of 1.7 to 2.3 nm was observed firstly by TEM on the sample. |
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| Keywords: | nano-structure silicon semiconductor materials |
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