Semiconductor formers of high-voltage pulses of nanosecond duration |
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Authors: | Yu. V. Aristov V. B. Voronkov I. V. Grekhov A. L. Zhmodikov A. K. Kozlov S. V. Korotkov |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia |
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Abstract: | A small former of high-voltage pulses of nanosecond duration based on new semiconductor devices—deep-level dynistors (DLDs)—is described. The former has been developed on the basis of the Marx voltage-multiplication principle and allows formation of 8-kV voltage pulses across an 8-Ω load at a 2.5-kV input-voltage level. A DLD-based former with an output diode opening switch based on assemblies of drift step-recovery diodes connected in series is described. The results of its being tested are presented. Voltage pulses with an amplitude of 25 kV and a rise time of 1 ns are obtained across a 100-Ω load. |
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