| 硫掺杂纳米金刚石薄膜的图形化生长 |
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| 引用本文： | 赵庆勋,石利忠,王永杰,刘保亭,葛大勇.硫掺杂纳米金刚石薄膜的图形化生长[J].电子元件与材料,2008,27(12). |
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| 作者姓名： | 赵庆勋 石利忠 王永杰 刘保亭 葛大勇 |
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| 作者单位： | 1. 河北大学,物理科学与技术学院,河北,保定,071002
2. 华北电力大学,数理学院,河北,保定,071003 |
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| 基金项目： | 河北省自然科学基金，河北省自然科学基金基地专项资助项目 |
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| 摘 要： | 利用电子增强热丝化学气相沉积(EACVD)技术,以CH4/H2/H2S/Ar为工作气体,SiO2/Si为衬底,制备了硫掺杂金刚石薄膜。研究了利用光刻技术实现薄膜的图形化生长。结果表明:以SiO2作掩模的光刻技术能够使得硫掺杂金刚石薄膜在光滑SiO2/Si基片上很好地图形化生长。Hall效应检测表明硫掺杂金刚石薄膜为n型,给出了n型金刚石/p-Si异质结的反向I-V特性曲线。
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| 关 键 词： | 复合材料 金刚石薄膜 硫掺杂 化学气相沉积 图形化 光刻 |
Patterning growth of sulfur doped nano-crystalline diamond films |
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| ZHAO Qing-xun,SHI Li-zhong,WANG Yong-jie,LIU Bao-ting,GE Da-yong.Patterning growth of sulfur doped nano-crystalline diamond films[J].Electronic Components & Materials,2008,27(12). |
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| Authors: | ZHAO Qing-xun SHI Li-zhong WANG Yong-jie LIU Bao-ting GE Da-yong |
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| Affiliation: | ZHAO Qing-xun1,SHI Li-zhong1,WANG Yong-jie2,LIU Bao-ting1,GE Da-yong1 (1. College of Physics Science & Technology,Hebei University,Baoding 071002,Hebei Province,China,2. College of Mathematics & Physics,North China Electric Power University,Baoding 071003,China) |
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| Abstract: | Sulfur doped diamond thin films were prepared via electron assisted hot filament chemical vapor deposition (EACVD) using CH4/H2S/Ar as working gas and SiO2/Si as substrate. Diamond film patterned by photolithography was studied. The results show that sulfur doped diamond film are grown on smooth SiO2/Si substrate patterned by photolithography. Hall effect measurement indicates that the sulfur doped diamond film is n-type,moreover the reverse I-V characteristics of n-diamond/p-Si heterojunction is investigat... |
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| Keywords: | composite material diamond thin film sulfur doping chemical vapor deposition patterning photolithography |
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