磁控溅射法La0.5Ca0.5MnxTi1-xO3薄膜的制备与结构研究

利用射频磁控溅射法结合后期热处理，在Si（100）基板上以不同的工艺条件成功制备了La0.5Ca
0.5MnxTi1-xO3（LCMTO）复铁电性磁电子薄膜.通过X射线衍射（XRD）、原子力显微镜（AFM）、电子衍射
能谱（EDS）等手段对薄膜进行了相的形成、结构特性及薄膜组成等的测试.研究表明，薄膜在600℃以上
开始析晶，850℃以上结晶完成,形成正交晶系钙钛矿相.硅基板上的LCMTO薄膜在不同温度下析出晶相的晶
格常数不同，温度越高，晶相的晶格常数越大；薄膜厚度越大，晶格常数相对较小;在薄膜制备时提高氧
分压，形成氧空位浓度低的完整晶相， Si基板上LCMTO薄膜的晶格常数相对较小.

Preparation and structure of La0.5Ca0.5MnxTi1-xO3 thin film deposited by magneto controlled sputtering

Multi-ferroelectric and magnetoelectric thin films of La_(0.5)Ca_(0.5)MnxTi_(1-x)O_3(LCMTO) were deposited on Si (100) substrate by magneto controlled sputtering under different preparation conditions. X-ray diffraction (XRD), atomic forced microscopy (AFM) and electronic diffraction spectroscopy (EDS) were respectively used to measure the morphologies, phase structures and composition. All the orthorhombic perovskite phases formed initially at heat treatment temperature of about 600 and thoroughly above 850 in the LCMTO thin film deposited on Si (100) substrate. The contents of the perovskite phase in the thin film increased with increasing heat treatment temperature up to 850. The lattice constant of the perovskite phase in LCMTO thin film deposited on Si (100) depended on the heat treatment temperature, thin film thickness and oxygen concentration in vacuum chamber during preparation of the LCMTO thin film which due to the existence of stress between the thin film and silicon substrate.