| 硅异质结晶体管的试制 |
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| 引用本文： | 苏里曼,张书绅.硅异质结晶体管的试制[J].固体电子学研究与进展,1987(4). |
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| 作者姓名： | 苏里曼 张书绅 |
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| 作者单位： | 北京电子管厂
(苏里曼)，北京电子管厂(张书绅) |
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| 摘 要： | 本文较详细地分析了Si/α-Si异质结晶体管(HBT)的微波性能和工艺优点,简述了工艺过程,初步实验结果证实:Si/α-Si HBT具有较好的小电流特性,晶体管的h_(fe)=12(V_(CE=10V,I_C=1mA),BV_(CEO)=20V。
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Evaluation and Development of a Heterojunction Silicon Bipolar Transistor |
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| Abstract: | The paper details the high frequency performances and the advantages of the processing of a Si/a-Si heterojunction bipolar transistor (HBT). the processing of the HBT is briefly presented. Our preliminary experimental results reveal that the Si/α-Si emitter has a low recombination rate resulting in a slow drop, current gain, and that the Si/α-Si HBT provides hfe = 12(VCE = 10V,Ic=lmA) and BVcE0= 20V. |
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