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Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure
Authors:I. Y. Jung  Y. M. Park  Y. J. Park  J. I. Lee  T. W. Kim
Affiliation:(1) Nano-Device Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130-650, Korea;(2) Present address: Advanced semiconductor research center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea
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