| 离子注入浅结制备技术 |
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| 引用本文： | 曾庆高.离子注入浅结制备技术[J].半导体光电,1994(2). |
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| 作者姓名： | 曾庆高 |
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| 作者单位： | 重庆光电技术研究所 |
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| 摘 要： | 根据近年来的文献资料总结报道几种离子注入浅结制备技术，即：大角度偏转注入、分子离子注入、双离子注入，通过介质掩膜注入，注入固体源驱入扩散再分布、等离子体浸没离子注入（ＰＩＩＩ）和反冲离子注入等。
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| 关 键 词： | 离子注入，快速退火（RTA），浅结，制备 |
Fabrication Technology of Shallow Junction by Ion Implantation |
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| Zeng Qinggao.Fabrication Technology of Shallow Junction by Ion Implantation[J].Semiconductor Optoelectronics,1994(2). |
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| Authors: | Zeng Qinggao |
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| Abstract: | A number of fabrication technologies of shallow junction by ion implantation are reported in this paper based on recent literatures. These technologies include wide-angle deflection implantation, molecule-ion implantation,dual ion implantation,implantation through dielectric mask , drive-in diffusion redistribution of implantated solid source,PIII and recoil ion implantation , etc. |
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| Keywords: | Ion Implantation RTA Shallow Junction Fabrication |
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