工作压强和退火温度对SiC薄膜结构的影响

用双射频共溅射和溅射后退火的方法在单晶Si(111)衬底上制备了SiC薄膜。利用X射线衍射仪(XRD)、扫描电镜(SEM)及原子力显微镜(AFM)分析了样品的物相组成、形貌和结构。研究发现,此种方法制备得到8H-SiC薄膜,在1.5～3Pa时增大工作压强有利于SiC薄膜退火之后结晶,同时薄膜沉积速率降低,使生长变致密,粗糙度减小,薄膜表面趋于平滑。对SiC薄膜进行850、1000、1150℃退火,结果表明,适当升高退火温度有利于提高薄膜的结晶质量和晶化程度,提高薄膜的致密度,降低薄膜中的缺陷密度。

Effect of Pressure and Annealing Temperature on Structure of SiC Thin Films

The 8H-SiC thin films were prepared on Si(111)substrates by RF magnetron sput-tering,and then annealed in a vacuum annealing system.X-ray diffraction(XRD),scanning electron microscopy(SEM)and atomic force microscopy(AFM)were employed to analyze the phase composition,structure and surface morphology of the as-deposited films and the annealed ones.The results show that increasing pressure in the range of 1.5-3 Pa is beneficial to the crystallization of SiC film after annealing,meanwhile the deposition rate of...