Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system |
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Authors: | Yusuke Komura Tomoki Narita |
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Affiliation: | a Department of Electrical Engineering and Computer Science, Nagoya University, Chikusa, Nagoya, 464-8603, Japan b Department of Electric and Electronic Engineering, Gifu University, Yanagido, Gifu, 501-1193, Japan |
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Abstract: | We investigated an influence of gas pressure on low-temperature preparation of nanocrystalline cubic silicon carbide (nc-3C-SiC) films by hot-wire chemical vapour deposition (HW-CVD) using SiH4/CH4/H2 system. X-ray diffraction (XRD) and Fourier transform infrared (FT-IR) spectra revealed that the films prepared below 1.5 Torr were Si-nanocrystallite-embedded hydrogenated amorphous SiC. On the other hand, nc-3C-SiC films were successfully prepared at gas pressure above 2 Torr. The high gas pressure plays two important roles in low-temperature preparation of nc-3C-SiC films: (1) leading to sufficient decomposition of CH4 molecules through a gas phase reaction and an increase in the incorporation of carbon atoms into film and (2) promoting a creation of H radicals on the heated filament, allowing the sufficient coverage of growing film surface and a selective etching of amorphous network structure and/or crystalline-Si phase. It was found that total gas pressure is a key parameter for low-temperature preparation of nc-3C-SiC films. |
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Keywords: | HW-CVD 3C-SiC Low-temperature deposition Nanocrystal Wide band gap material |
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