| Nb5+掺杂改性CaBi4Ti4O15压电陶瓷的研究 |
| |
| 引用本文： | 洪燕,李月明,沈宗洋,王竹梅,廖润华,李润润,刘虎.Nb5+掺杂改性CaBi4Ti4O15压电陶瓷的研究[J].陶瓷学报,2011,32(2):224-227. |
| |
| 作者姓名： | 洪燕 李月明 沈宗洋 王竹梅 廖润华 李润润 刘虎 |
| |
| 作者单位： | 景德镇陶瓷学院材料科学与工程学院,江西省先进陶瓷材料重点实验室,江西景德镇333403 |
| |
| 摘 要： | 采用传统固相烧结法,制备了CaBi4Ti(1-x)NbxO1(5x=0.00-0.05,CBT-N)系铋层状结构无铅压电陶瓷。研究了Nb5+掺杂对CBT压电陶瓷压电与介电性能的影响。研究结果表明:添加Nb5+离子,改善了CBT陶瓷的烧结特性,提高了瓷体的致密度。Nb2O5的引入降低了CBT系列陶瓷的介质损耗,改善了陶瓷的压电与介电性能。当掺入量x=0.04(CaBi4Ti0.96Nb0.04O15)时制备的CBT基铋层状压电陶瓷具有优异的压电性能:d33=14pC/N,Qm=3086,εr=212,tanδ=0.0041,kt/kp=1.681。
|
| 关 键 词： | 铋层状 介电性能 压电性能 CaBi4Ti4O15 |
Nb5+ Modified CaBi4Ti4O15 Piezoelectric Ceramics |
| |
| HONG Yan,LI Yueming,SHEN Zongyang,WANG Zhumei,LIAO Runhua,LI Runrun,LIU Hu.Nb5+ Modified CaBi4Ti4O15 Piezoelectric Ceramics[J].Journal of Ceramics,2011,32(2):224-227. |
| |
| Authors: | HONG Yan LI Yueming SHEN Zongyang WANG Zhumei LIAO Runhua LI Runrun LIU Hu |
| |
| Affiliation: | HONG Yan LI Yueming SHEN Zongyang WANG Zhumei LIAO Runhua LI Runrun LIU Hu(School of Materials Science and Engineering,Jingdezhen Ceramic Institute,Key Laboratory of Advanced Ceramics of Jiangxi Province,Jingdezhen Jiangxi 333403,China) |
| |
| Abstract: | Leadless CaBi4Ti(1-x)NbxO15(x=0.00-0.05,CBT-N) bismuth-layered structural piezoelectric ceramics was prepared by solid state sintering process.Effects of Nb5+ doping on the piezoelectric and dielectric properties of CBT ceramics were studied.Results showed:the doping of Nb5+ improved the sintering properties and density of CBT ceramics;the addition of Nb2O5 lowered the dielectric loss and improved the piezoelectric and dielectric properties.When the doping amount x=0.04,the CaBi4Ti0.96Nb0.04O15 bismuth-laye... |
| |
| Keywords: | bismuth-layered structure dielectric properties piezoelectric properties CaBi4Ti4O15 |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
