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Nb5+掺杂改性CaBi4Ti4O15压电陶瓷的研究
引用本文:洪燕,李月明,沈宗洋,王竹梅,廖润华,李润润,刘虎. Nb5+掺杂改性CaBi4Ti4O15压电陶瓷的研究[J]. 陶瓷学报, 2011, 32(2): 224-227
作者姓名:洪燕  李月明  沈宗洋  王竹梅  廖润华  李润润  刘虎
作者单位:景德镇陶瓷学院材料科学与工程学院,江西省先进陶瓷材料重点实验室,江西景德镇333403
摘    要:采用传统固相烧结法,制备了CaBi4Ti(1-x)NbxO1(5x=0.00-0.05,CBT-N)系铋层状结构无铅压电陶瓷。研究了Nb5+掺杂对CBT压电陶瓷压电与介电性能的影响。研究结果表明:添加Nb5+离子,改善了CBT陶瓷的烧结特性,提高了瓷体的致密度。Nb2O5的引入降低了CBT系列陶瓷的介质损耗,改善了陶瓷的压电与介电性能。当掺入量x=0.04(CaBi4Ti0.96Nb0.04O15)时制备的CBT基铋层状压电陶瓷具有优异的压电性能:d33=14pC/N,Qm=3086,εr=212,tanδ=0.0041,kt/kp=1.681。

关 键 词:铋层状  介电性能  压电性能  CaBi4Ti4O15

Nb5+ Modified CaBi4Ti4O15 Piezoelectric Ceramics
HONG Yan,LI Yueming,SHEN Zongyang,WANG Zhumei,LIAO Runhua,LI Runrun,LIU Hu. Nb5+ Modified CaBi4Ti4O15 Piezoelectric Ceramics[J]. Journal of Ceramics, 2011, 32(2): 224-227
Authors:HONG Yan  LI Yueming  SHEN Zongyang  WANG Zhumei  LIAO Runhua  LI Runrun  LIU Hu
Affiliation:HONG Yan LI Yueming SHEN Zongyang WANG Zhumei LIAO Runhua LI Runrun LIU Hu(School of Materials Science and Engineering,Jingdezhen Ceramic Institute,Key Laboratory of Advanced Ceramics of Jiangxi Province,Jingdezhen Jiangxi 333403,China)
Abstract:Leadless CaBi4Ti(1-x)NbxO15(x=0.00-0.05,CBT-N) bismuth-layered structural piezoelectric ceramics was prepared by solid state sintering process.Effects of Nb5+ doping on the piezoelectric and dielectric properties of CBT ceramics were studied.Results showed:the doping of Nb5+ improved the sintering properties and density of CBT ceramics;the addition of Nb2O5 lowered the dielectric loss and improved the piezoelectric and dielectric properties.When the doping amount x=0.04,the CaBi4Ti0.96Nb0.04O15 bismuth-laye...
Keywords:bismuth-layered structure  dielectric properties  piezoelectric properties  CaBi4Ti4O15  
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