Comparison of low frequency noise and high frequency performances of double and simple polysilicon Bi-CMOS BJT |
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Authors: | C. Delseny, A. P narier, F. Pascal, S. G. Jarrix,P. Llinares |
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Affiliation: | a Centre d'Electronique et de Micro-optoélectronique de Montpellier, CNRS-Université UMR 5507, Place Bataillon, UM II, 34095 Montpellier Cedex 5, France;b STMicroelectronics BP 16, 38921 Crolles, France |
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Abstract: | The issue of this paper concerns 0.35 μm Bi-CMOS double polysilicon bipolar transistors and 0.5 μm Bi-CMOS simple polysilicon bipolar transistors. Low-frequency noise measurements are performed. Noise spectral densities are analysed versus bias and geometry. From these noise measurements, base and emitter series resistances are extracted. A comparison of both technologies is done. Though double polysilicon transistors have a more complex structure than the simple polysilicon ones, they exhibit similar or even better performances. Indeed, DC characteristics and noise levels are equivalent for both technologies. Double polysilicon transistors exhibit a reduction of the base resistance and a significant improvement of the transition frequency fT is obtained. |
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