| ULSI制造中Cu的电化学机械抛光 |
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| 引用本文： | 储向峰,白林山,李玉琢.ULSI制造中Cu的电化学机械抛光[J].微纳电子技术,2009,46(2). |
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| 作者姓名： | 储向峰 白林山 李玉琢 |
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| 作者单位： | 1. 安徽工业大学,化学与化工学院,安徽,马鞍山,243002
2. 安徽工业大学,化学与化工学院,安徽,马鞍山,243002;Clarkson,大学,化学系,先进材料制造中心,美国,纽约,13699 |
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| 摘 要： | 电化学机械抛光(ECMP)技术可以在低压力下进行,有可能替代化学机械抛光(CMP)技术,满足含易碎、低介电常数材料的小尺寸特征结构的ULSI中Cu的抛光要求。利用自制的抛光液和改装的抛光机对晶圆片和图案晶圆片上的Cu进行电化学机械抛光,研究了抛光电压、抛光台转速、抛光压力和抛光液流量对抛光速率的影响,发现在抛光电压为4.7V、流量为150～200mL/min、抛光台转速为30～40r/min、抛光压力为3.45kPa时能达到较好的抛光速率。考察了抛光电压对图案晶圆片上台阶高度减小效率的影响,发现台阶高度减小效率随抛光电压增大而减小,并且对抛光机理做了初步分析。
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| 关 键 词： | 超大规模集成电路 铜 电化学机械抛光 化学机械抛光 抛光机理 |
ECMP of Cu in the Preparation Process of ULSI |
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| Chu Xiangfeng,Bai Linshan,Li Yuzhuo.ECMP of Cu in the Preparation Process of ULSI[J].Micronanoelectronic Technology,2009,46(2). |
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| Authors: | Chu Xiangfeng Bai Linshan Li Yuzhuo |
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| Affiliation: | 1.School of Chemistry and Chemical Engineering;Anhui University of Technology;Maanshan 243002;China;2.Center of Advanced Materials Processing;Department of Chemistry;Clarkson University;New York 13699;USA |
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| Abstract: | Electrochemical mechanical polish(ECMP)that can be operated at low pressure,may replace chemical mechanical polishing(CMP)to satisfy the polishing requirement of Cu in ULSI of the fragile,low-k materials with small size.The copper films on wafers and pattern wafers were polished by ECMP using home-made slurry and modified polisher.The effects of the polishing voltage,table rotational speed,polishing pressure and slurry flowrate on the polishing rate were investigated.The result shows that the better polishi... |
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| Keywords: | ultra-large scale integration(ULSI) Cu electrochemical mechanical polish(ECMP) chemical mechanical polishing(CMP) polishing mechanism |
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