| 硅靶中频反应磁控溅射二氧化硅薄膜的特性研究 |
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| 引用本文： | 许生,侯晓波,范垂祯,赵来,周海军,吴克坚,高文波,颜远全,查良镇. 硅靶中频反应磁控溅射二氧化硅薄膜的特性研究[J]. 真空, 2001, 0(5): 1-6 |
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| 作者姓名： | 许生 侯晓波 范垂祯 赵来 周海军 吴克坚 高文波 颜远全 查良镇 |
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| 作者单位： | 1. 深圳豪威真空光电子股份有限公司
2. 清华大学电子工程系 |
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| 摘 要： | 报道了中频双靶反应磁控溅射制备二氧化硅（SiO2)薄膜的装置、工艺及薄膜特性。对制备的SiO2薄膜的化学配比和元素化学态进行了SAM和XPS分析，测试了膜层对钠离子（Na^ )阻挡性能、光学折射率和可见光的透过率。研究表明作者开发的中频双靶反应磁控溅射沉积SiO2薄膜的设备和工艺可以高速率、大面积制备高质量的SiO2膜。
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| 关 键 词： | 反应磁控溅射 二氧化硅 薄膜 制备 性质 化学配比 ITO透明导电玻璃 元素 化学态 分析 阻挡性 镀膜 阻挡层 |
| 文章编号： | 1002-0322(2001)05-0001-06 |
| 修稿时间： | 2001-05-21 |
Characteristics of SiO_2 film deposited by medium frequency reactive magnetron sputtering with Si-target |
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| XU Sheng ,HOU Xiao-bo ,FAN Chui-zhen ,ZHAO Lai ,ZHOU Hai-jiun ,WU Ke-jian ,GAO Wen-bo ,YAN Yuan-quan ,ZHA Liang-zhen. Characteristics of SiO_2 film deposited by medium frequency reactive magnetron sputtering with Si-target[J]. Vacuum(China), 2001, 0(5): 1-6 |
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| Authors: | XU Sheng HOU Xiao-bo FAN Chui-zhen ZHAO Lai ZHOU Hai-jiun WU Ke-jian GAO Wen-bo YAN Yuan-quan ZHA Liang-zhen |
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| Affiliation: | XU Sheng 1,HOU Xiao-bo 2,FAN Chui-zhen 1,ZHAO Lai 2,ZHOU Hai-jiun 1,WU Ke-jian 1,GAO Wen-bo 1,YAN Yuan-quan 1,ZHA Liang-zhen 2 |
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| Abstract: | The system, technology, and characteristics of SiO 2 film deposited by medium frequency reactive magnetron sputtering are reported. The stoichiometric composition and element chemical state of the deposited film were analyzed by SAM and XPS. The barrier property to Na , the refractive index and transmittance for visible light were tested. It's shown that high-quality SiO 2 film could be deposited at high rate and in large size by this medium frequency reactive magnetron sputtering system and technology. |
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| Keywords: | reactive magnetron sputtering SiO 2 characteristics |
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