| 一次液相外延的阶梯衬底内条形激光器 |
| |
| 引用本文： | 杜国同,马骁宇,邹峥,高鼎三. 一次液相外延的阶梯衬底内条形激光器[J]. 半导体学报, 1988, 9(3): 335-337 |
| |
| 作者姓名： | 杜国同 马骁宇 邹峥 高鼎三 |
| |
| 作者单位： | 吉林大学电子科学系 长春(杜国同，马骁宇，邹峥)，吉林大学电子科学系 长春(高鼎三) |
| |
| 摘 要： | 设计研制了一种新的低阈值、单模工作的(GaAl)As/GaAs激光器.该激光器结构巧妙地利用了非平面衬底液相外延的性质,所有外延层的生长和电流通路内条的形成均在一次液相外延中完成,制造工艺非常单简.
|
| 关 键 词： | 阶梯衬底 内条 一次液相外延 GaAs 激光器 |
Terraced Substrate Inner Stripe Lasers by One-Step Liquid Phase Epitaxy |
| |
| Du Guotong/. Terraced Substrate Inner Stripe Lasers by One-Step Liquid Phase Epitaxy[J]. Chinese Journal of Semiconductors, 1988, 9(3): 335-337 |
| |
| Authors: | Du Guotong/ |
| |
| Affiliation: | Du Guotong/Department of Electronic Science,Jilin University,ChangchunMa Xiaoyu/Department of Electronic Science,Jilin University,ChangchunZou Zheng/Department of Electronic Science,Jilin University,ChangchunGao Dingsan/Department of Electronic Science,Jilin University,Changchun |
| |
| Abstract: | A new (GaAl)As/GaAs laser whith low threshohld current and single mode is developed.Making ingeniously use of properties of liquid-phase epitaxy over nonplanar substrate,thegrowth of all layers and the inner stripe for a current channel is completed by one-step liquid-phase epitaxy.The fabrication process is very simple. |
| |
| Keywords: | Terraced substrate Inner stripe One-step liquid phase epitaxy GaAs Laser |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
