Design and performance of 20 dB gain two-tier matrix distributed amplifier |
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| Authors: | D'Agostino S D'Inzeo G Grifoni G Marietti P Panariello G |
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| Affiliation: | Dept. of Electron., Rome Univ., Italy; |
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| Abstract: | A matrix distributed amplifier, having a gain of 20 dB with a noise figure of 5 dB in the frequency range between 0.5-12 GHz, is presented. The amplifier, realised in hybrid technology using commercially available GaAs HEMTs, incorporates a novel scheme which allows the biasing of a single stage of the two tier amplifier (two rows of active devices) with a unique controlling resistance and, at the same time, the cascading of the two FETs of each stage. The computed results obtained using a small signal model for each FET fit rather well with the measurements in the whole frequency range.<> |
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