| SiGe/SiHBT异质界面与pn结界面的相对位移的影响 |
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| 引用本文： | 徐晨,沈光地,邹德恕,陈建新,李建军,罗辑,魏欢,周静,董欣.SiGe/SiHBT异质界面与pn结界面的相对位移的影响[J].电子学报,2000,28(8):63-65. |
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| 作者姓名： | 徐晨 沈光地 邹德恕 陈建新 李建军 罗辑 魏欢 周静 董欣 |
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| 作者单位： | 北京工业大学电子工程系,北京市光电子技术实验室,北京 100022 |
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| 基金项目： | 国家高技术研究发展计划(863计划);863-307-15-4(6; |
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| 摘 要： | 从模拟和实验两方面研究了SiGe/Si HBT发射结中pn结界面和SiGe/Si界面的相对位置对器件的电流增益和频率特性的影响.发现两界面偏离时器件性能会变差.尤其是当pn结位于SiGe/Si界面之前仅几十?就足以产生相当高的电子寄生势垒,严重恶化器件的性能.据此分析了基区B杂质的偏析和外扩对器件的影响以及SiGe/Si隔离层的作用.
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| 关 键 词： | SiGe/Si异质结双极晶体管(HBT) SiGe/Si异质界面 pn结界面 |
| 收稿时间： | 1999-05-21 |
Effects of Relative Position between SiGe/Si Interface and pn Junction(EB) in SiGe/Si HBT |
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| XU Chen,SHEN Guang-di,ZOU De-shu,CHEN Jian-xi,LI Jian-jun,LUO Ji,WEI Huan,ZHOU Jing,DONG Xin.Effects of Relative Position between SiGe/Si Interface and pn Junction(EB) in SiGe/Si HBT[J].Acta Electronica Sinica,2000,28(8):63-65. |
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| Authors: | XU Chen SHEN Guang-di ZOU De-shu CHEN Jian-xi LI Jian-jun LUO Ji WEI Huan ZHOU Jing DONG Xin |
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| Affiliation: | Electronic Engineering Department,Beijing Polytechnic University and Beijing Optoelectronic Technology Laboratory,Beijing 100022,China |
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| Abstract: | The effects of the relative position between the interfaces of pn junction (emitter base) and SiGe/Si on the current gain and frequency performance of SiGe/Si HBT are investigated by simulation and experiment.It is found that the performance of the HBT will degrade as the two interfaces segregate,and a considerable parasitic barrier will be formed if SiGe/Si interface is only tens angstroms away from pn junction interface towards the base,drastically deteriorating the current gain and cutoff frequency.Based on this,the effects of B dopant segregation and out diffusion in the base of SiGe/Si HBT and i SiGe spacers are investigated. |
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| Keywords: | SiGe/Si HBT surface segregation SiGe/Si interface pn junction interface |
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