Department of Physics and Astronomy, University of Wales College of Cardiff, P.O. Box 913, Cardiff CF1 3TH, U.K.
Abstract:
The passivation of GaAs (100) surfaces by Se and ZnSe has been investigated using soft X-ray photoelectron spectroscopy and low energy electron diffraction. An interface layer is identified which reflects a compound of gallium and selenium and it is shown that GaSe is consistent with the data. The mechanism whereby band bending is removed is also considered.