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Selenide layers on gallium ARSENIDE (100): Chemical reactions and electronic passivation
Authors:J. Cairns   A. A. Cafolla   A. Hughes   C. Nowak  R. H. Williams
Affiliation:

Department of Physics and Astronomy, University of Wales College of Cardiff, P.O. Box 913, Cardiff CF1 3TH, U.K.

Abstract:
The passivation of GaAs (100) surfaces by Se and ZnSe has been investigated using soft X-ray photoelectron spectroscopy and low energy electron diffraction. An interface layer is identified which reflects a compound of gallium and selenium and it is shown that GaSe is consistent with the data. The mechanism whereby band bending is removed is also considered.
Keywords:
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