Continuous-wave operation of all-epitaxial InP-based 1.3 /spl mu/m VCSELs with 57% differential quantum efficiency |
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Authors: | Feezell D Buell DA Coldren LA |
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Affiliation: | Electr. & Comput. Eng. Dept., Univ. of California, CA, Santa Barbara, USA; |
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Abstract: | All-epitaxial InP-based 1.3 /spl mu/m VCSELs with a record-high continuous-wave differential quantum efficiency (57%) for single active region long-wavelength devices are demonstrated. Low-loss optical mode confinement is achieved through a selectively etched undercut tunnel-junction aperture. Singlemode continuous-wave lasing was observed up to 87/spl deg/C and the room-temperature output power was 1.1 mW at a current of 4.1 mA and a wavelength of 1.305 /spl mu/m. |
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