Impact-ionization-stimulated electroluminescence in isotype n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures |
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| Authors: | N. L. Bazhenov B. E. Zhurtanov K. D. Mynbaev A. P. Astakhova A. N. Imenkov M. P. Mikhaĭlova V. A. Smirnov N. D. Stoyanov Yu. P. Yakovlev |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
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| Abstract: | We have studied electroluminescence in n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures with isotype heterojunctions, in which the quantum efficiency of emission is increased due to the additional production of electron-hole pairs as a result of the impact ionization that takes place near the heterointerface. The impact ionization in such heterostructures is possible due to the presence of deep wells in the energy band structure. |
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