| MgO掺杂Ba_(0.7)Sr_(0.3)TiO_3基电容器陶瓷的研究 |
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| 引用本文： | 赵晨,黄新友,高春华.MgO掺杂Ba_(0.7)Sr_(0.3)TiO_3基电容器陶瓷的研究[J].电子元件与材料,2006,25(12):60-62. |
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| 作者姓名： | 赵晨 黄新友 高春华 |
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| 作者单位： | 江苏大学材料科学与工程学院,江苏,镇江,212013 |
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| 摘 要： | 以通用的陶瓷工艺合成Ba0.7Sr0.3TiO3基电容器陶瓷。通过实验研究MgO掺杂量对材料εr、tanδ和容量温度变化率等性能的影响,探讨了MgO的掺杂改性机理。结果表明:MgO具有减小介电常数温度变化率,降低陶瓷气孔率,细化陶瓷晶粒尺寸的作用。当MgO的质量分数为0.20%时,陶瓷的εr达最大值4528;质量分数为1.00%时,得到εr为4090,tanδ为0.0043,介电常数温度变化率为21.1%的Y5V瓷料。
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| 关 键 词： | 无机非金属材料 电容器陶瓷 钛酸锶钡 氧化镁 Y5V 掺杂改性 |
| 文章编号： | 1001-2028（2006）12-0060-03 |
| 收稿时间： | 2006-08-24 |
| 修稿时间： | 2006-08-24 |
Study on MgO Doped Ba0.7Sr0.3TiO3 Series Capacitor Ceramics |
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| ZHAO Chen,HUANG Xin-you,GAO Chun-hua.Study on MgO Doped Ba0.7Sr0.3TiO3 Series Capacitor Ceramics[J].Electronic Components & Materials,2006,25(12):60-62. |
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| Authors: | ZHAO Chen HUANG Xin-you GAO Chun-hua |
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| Affiliation: | School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China |
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| Abstract: | The effects of MgO doping on the dielectric properties of Ba0.7Sr0.3TiO(3BST)capacitor ceramics were studied, and mechanism for modifying the properties and microstructure of the BST ceramics by doping of MgO was investigated. The results show that MgO additive can widen the dielectric constant-temperature curve , decrease the porosity and adjust the crystallite size for BST ceramics.The dielectric constant is maximum(4 528) while w(MgO) is 0.2 %. The BST ceramics with optimum comprehensive properties have been obtained, having high εr (4 090), low tanδ(0.004 3) and low constant-temperature changing rate absolute value (?εr /εr = 21.1 %)while w(MgO) is 1.00 %. |
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| Keywords: | Y5V |
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