UV-vis and photoluminescent spectra of TiO2 films |
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Authors: | Zhao Qing-nan Li Chun-ling Liu Bao-shun Zhao Xiu-jian |
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Affiliation: | (1) Centre for Materials Research and Analysis, Wuhan University of Techuology, 430070 Wuhan, China |
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Abstract: | TiO2 fims have been deposited on glass substrates using DC reactive magnetron sputtering at different oxygen partial pressures from 0. 10 Pa.to 0.65 Pa. The transmittance (UV-vis) and photoluminescence (PL) spectra of the films were recorded. The results of the UV-vis spectra show that the deposition rate of the films decreased at oxygen partial pressure P(O2)≥0.15 Pa, the band gap increased from 3.48 eV to 3.68eV for direct transition and from 3.27 eV to 3.34 eV for indirect transition with increasing the oxygen partial pressure. The PL spectra show convincingly that the transition for films was indirect, and there were some oxygen defect energy levels at the band gap of the films. With increasing the O2 partial pressure, the defect energy levels decreased. For the films sputtered at 0.35 and 0.65 Pa there were two defect energy levels at 2.63 eV and 2.41 eV, corresponding to 0.72 eV and 0.94 eV below the conduction band for a band gap of 3.35 eV, respectively. For the films sputtered at 0.10 Pa and 0.15 Pa, there was an energy band formed between 3.12 eV and 2.06 eV, corresponding to 0.23 eV and 1.29 eV below the conduction band. ZHAO Qing-nan : Born in 1963 Funded by Natural Science Foundation of Hubei Province, China. |
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Keywords: | TiO2 films indirect transition defect energy level sputtering |
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