InGaAs/GaAsSb/InP terahertz quantum cascade lasers |
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| Authors: | Christoph Deutsch Hermann Detz Tobias Zederbauer Michael Krall Martin Brandstetter Aaron M. Andrews Pavel Klang Werner Schrenk Gottfried Strasser Karl Unterrainer |
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| Affiliation: | 1. Photonics Institute and Center for Micro- and Nanostructures, Technische Universit?t Wien, Gusshausstrasse 27-29, 1040, Vienna, Austria
2. Institute for Solid State Electronics and Center for Micro- and Nanostructures, Technische Universit?t Wien, Floragasse 7, 1040, Vienna, Austria
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| Abstract: | The development of In0.53Ga0.47As/GaAs0.51Sb0.49 terahertz quantum cascade lasers is reviewed, starting with the first demonstration, through growth direction dependent performance issues, to high performance devices. This InP-based material system is an attractive alternative to the almost exclusively used GaAs/AlxGa1-xAs. Devices achieve maximum operating temperatures of 142 K and exhibit broadband lasing over a range of 660 GHz. A special focus has to be put on the growth direction related interface asymmetry for this material system. Symmetric active region designs are an elegant technique to investigate such asymmetries. A significant impact on the device performance is observed and attributed to interface roughness scattering. |
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