| 国产工艺的部分耗尽SOI MOSFET总剂量辐照效应及可靠性 |
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| 引用本文： | 崔江维,余学峰,刘刚,李茂顺,兰博,赵云,费武雄,陈睿. 国产工艺的部分耗尽SOI MOSFET总剂量辐照效应及可靠性[J]. 原子能科学技术, 2010, 44(10): 1257-1261. DOI: 10.7538/yzk.2010.44.10.1257 |
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| 作者姓名： | 崔江维 余学峰 刘刚 李茂顺 兰博 赵云 费武雄 陈睿 |
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| 作者单位： | 1.中国科学院新疆理化技术研究所，新疆乌鲁木齐830011；2.新疆电子信息材料与器件重点实验室，新疆乌鲁木齐830011；3.中国科学院研究生院，北京100049；4.中国科学院微电子研究所，北京100029 |
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| 摘 要： | 对国产工艺的部分耗尽SOIMOSFET60Coγ射线的总剂量辐照效应及其可靠性进行了研究。结果表明:辐照引入的氧化物陷阱电荷是阈值电压漂移的主要因素;背栅对总剂量辐照更为敏感,但在背栅特性漂移未超出一定范围的情况下,依然是正栅氧化层质量决定了器件的抗辐照性能;界面态陷阱电荷的散射作用降低了器件的源漏饱和电流;总剂量辐照后器件的常规可靠性可能会降低。
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| 关 键 词： | 总剂量辐照效应 退火效应 可靠性 |
Total Dose Irradiation Effect and Reliability of Domestic Partially-Depleted SOI MOSFET |
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| CUI Jiang-wei,YU Xue-feng,LIU Gang,LI Mao-shun,LAN Bo,ZHAO Yun,FEI Wu-xiong,CHEN Rui. Total Dose Irradiation Effect and Reliability of Domestic Partially-Depleted SOI MOSFET[J]. Atomic Energy Science and Technology, 2010, 44(10): 1257-1261. DOI: 10.7538/yzk.2010.44.10.1257 |
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| Authors: | CUI Jiang-wei YU Xue-feng LIU Gang LI Mao-shun LAN Bo ZHAO Yun FEI Wu-xiong CHEN Rui |
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| Affiliation: | 1.Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;2.Xinjiang Key Laboratory of Electric Information Materials and Devices, Urumqi 830011, China;3.Graduate University of Chinese Academy of Sciences, Beijing 100049, China;4.Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | Total dose irradiation effect and reliability of domestic partially-depleted SOI MOSFET were studied. It is found that the oxide-trapped charge mainly causes the threshold voltage shift. The back gate is more sensitive to the total dose irradiation than the top gate, while it is still the top gate that determines the radiation performance of the device as the back gate shifts within a certain scope. The descendent of the saturated current results from the action of the interface-trap charge. It is also believed that the total dose irradiation will lower the device reliability. |
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| Keywords: | total dose irradiation effect annealing effect reliability |
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