| 击穿电压提高的AlGaN/GaN/AlGaN双异质结特性 |
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| 引用本文： | 马俊彩,张进成,薛军帅,林志宇,刘子扬,薛晓咏,马晓华,郝跃.击穿电压提高的AlGaN/GaN/AlGaN双异质结特性[J].半导体学报,2012,33(1):014002-5. |
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| 作者姓名： | 马俊彩 张进成 薛军帅 林志宇 刘子扬 薛晓咏 马晓华 郝跃 |
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| 基金项目： | 国家科技重大专项（批准号：2008ZX01002-002）；国家重大、重点自然科学基金（批准号：60890191 与 60736033） |
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| 摘 要： | 本文论述了AlGaN/GaN双异质结高电子迁移率晶体管的特性，该结构使用Al组分为7%的AlGaN来代替传统的GaN作为缓冲层。Al0.07Ga0.93N缓冲层增加了二维电子气沟道下方的背势垒高度，有效提高了载流子限阈性，从而造成缓冲层漏电的显著减小以及击穿电压的明显提高。对于栅尺寸为0.5100μm，栅漏间距为1μm的器件，AlGaN/GaN 双异质结器件的击穿电压（~100V）是常规单异质结器件的两倍（~50V）。本文中的双异质结器件在漏压为35V、频率为4GHz下，最大输出功率为7.78W/mm，最大功率附加效率为62.3%，线性增益为23dB。
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| 关 键 词： | AlGaN/GaN/AlGaN双异质结 击穿电压 载流子限阈性 |
| 收稿时间： | 7/18/2011 6:05:03 PM |
| 修稿时间： | 8/8/2011 11:31:39 PM |
Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage |
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| Ma Juncai,Zhang Jincheng,Xue Junshuai,Lin Zhiyu,Liu Ziyang,Xue Xiaoyong,Ma Xiaohua and Hao Yue.Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage[J].Chinese Journal of Semiconductors,2012,33(1):014002-5. |
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| Authors: | Ma Juncai Zhang Jincheng Xue Junshuai Lin Zhiyu Liu Ziyang Xue Xiaoyong Ma Xiaohua and Hao Yue |
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| Affiliation: | Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | |
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| Keywords: | AlGaN/GaN/AlGaN double heterojunctions breakdown voltage carrier confinement |
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