| 深亚微米NMOSFETs总剂量辐射与热载流子效应研究 |
| |
| 引用本文： | 崔江维,薛耀国,余学峰,任迪远,卢健,张兴尧.深亚微米NMOSFETs总剂量辐射与热载流子效应研究[J].半导体学报,2012,33(1):014006-4. |
| |
| 作者姓名： | 崔江维 薛耀国 余学峰 任迪远 卢健 张兴尧 |
| |
| 作者单位： | 中科院新疆理化技术研究所 |
| |
| 基金项目： | Acknowledgment The authors wish to thank the fellows of the Xinjiang Key Laboratory of Electronic Information Materials and Devices for their help and attention to this work. The authors also want to thank the fellows at Xinjiang Technical Institute of Physics ＆ Chemistry, who made the ^60Co y-rays available for all these experiments. |
| |
| 摘 要： | 本文对深亚微米器件的总剂量辐射与热载流子效应进行了对比试验研究。结果表明虽然总剂量与热载流子效应在损伤原理上存在相似的地方，但两种损伤的表现形式存在明显差异。总剂量辐射损伤主要增加了器件的关态泄漏电流，而热载流子损伤最显著的特点是跨导与输出特性曲线降低。分析认为，STI隔离区辐射感生氧化物正电荷形成的电流泄漏通道是造成总剂量辐射后电流增长的根源，而栅氧化层的氧化物负电荷与栅界面态的形成是造成热载流子退化的原因。因此，对二者进行加固时应侧重于不同的方面。
|
| 关 键 词： | 总剂量辐照效应 热载流子效应 亚微米 照射 面积 输出特性曲线 陷阱电荷 栅氧化层 |
| 收稿时间： | 6/21/2011 7:28:09 PM |
| 修稿时间： | 8/15/2011 1:05:39 PM |
Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs |
| |
| Cui Jiangwei,Xue Yaoguo,Yu Xuefeng,Ren Diyuan,Lu Jian and Zhang Xingyao.Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs[J].Chinese Journal of Semiconductors,2012,33(1):014006-4. |
| |
| Authors: | Cui Jiangwei Xue Yaoguo Yu Xuefeng Ren Diyuan Lu Jian and Zhang Xingyao |
| |
| Affiliation: | 1Xinjiang Technical Institute of Physics ＆ Chemistry, Chinese Academy of Sciences, Urumqi 830011, China 2Xinjiang Key Laboratory of Electric Information Materials and Devices, Urumuqi 830011, China 3 Graduate University of the Chinese Academy of Sciences, Beijing 100049, China 4Xi＇an Microelectronic Technology Institute, Xi＇an 710055, China) |
| |
| Abstract: | Total dose irradiation and the hot-carrier effects of sub-micro NMOSFETs are studied. The results show that the manifestations of damage caused by these two effects are quite different, though the principles of damage formation are somewhat similar. For the total dose irradiation effect, the most notable damage lies in the great increase of the off-state leakage current. As to the hot-carrier effect, most changes come from the decrease of the output characteristics curves as well as the decrease of trans-conductance. It is considered that the oxide-trapped and interface-trapped charges related to STI increase the current during irradiation, while the negative charges generated in the gate oxide, as well as the interface-trapped charges at the gate interface, cause the degradation of the hot-carrier effect. Different aspects should be considered when the device is generally hardened against these two effects. |
| |
| Keywords: | sub-micro total dose irradiation hot-carrier effect |
| 本文献已被 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
