Characterisation of a Schottky ISFET as Hg-MOSFET and as cytochrome P450-ENFET

A cost-effective and simple method is proposed wherein a Schottky ion sensitive field effect transistor (Schottky ISFET)-based sensor is characterised as metal oxide semiconductor and enzyme field effect transistor (ENFET). This technique involves deposition of mercury (Hg) as gate material over the sensing layer mitigating the complexity of fabrication process, thereby eliminating the need of refabricating an identical device. A Schottky-based ISFET simplifies the fabrication process as the requisite for doping of source and drain regions becomes redundant. Steps involved in lithography process for fabricating metal oxide semiconductor field effect transistor (MOSFET) are reduced with the use of liquid metal Hg as gate over layer. Such a device can be transformed back to an ISFET without any additional etching process. Furthermore, the same ISFET device can be utilised as an ENFET when the former is used in conjunction with a biological element. In this work, a Schottky-based ISFET has been characterised as Hg-MOSFET and as cytochrome P450-ENFET. Multiple tests on the device exhibit that the same ISFET sensor can be used both as a MOSFET and an ENFET with good repeatability and versatility without losing its sensitivity.