Formation of a-Si:H and a-Si1-xCx :H nanowires by Ag-assisted electroless etching in aqueous HF/AgNO3 solution |
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| Authors: | Rachida DouaniGaëlle Piret Toufik HadjersiJean-Noël Chazalviel Ionel Solomon |
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| Affiliation: | a Faculté des Sciences, Université Mouloud Mammeri, Tizi-Ouzou, Algeriab Physique de la Matière Condensée, Ecole Polytechnique, CNRS, 91128 Palaiseau, Francec Unité de Développement de la Technologie du Silicium (UDTS), 2, Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Algiers, Algeria |
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| Abstract: | The formation of hydrogenated amorphous silicon-carbon alloy (a-Si1-xCx:H) nanowires is studied for different carbon concentrations (0-7%) by using Ag-assisted electroless etching of the thin a-Si1-xCx:H films deposited by plasma-enhanced chemical vapour deposition from silane/methane gas mixtures. The nanowires morphologies (length, density, …), studied by scanning electron microscopy, strongly depend on the concentration of the etchant (aqueous solution of hydrofluoric acid and silver nitrate), the etching time, and the carbon concentration of the deposited layer. |
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| Keywords: | Silicon Silicon carbide Nanowires Electroless chemical etching Amorphous alloys Porous silicon Scanning Electron Microscopy |
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