CMOS RF amplifier and mixer circuits utilizing complementary Characteristics of parallel combined NMOS and PMOS devices |
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Authors: | Nam I Bonkee Kim Kwyro Lee |
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Affiliation: | Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejon, South Korea; |
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Abstract: | Design and chip fabrication results for complementary RF circuit topologies that utilize the complementary RF characteristics of both NMOS and PMOS field-effect-transistor devices combined in parallel way are reported, which can inherently provide single-ended differential signal-processing capability, requiring neither baluns, nor differential signal generating/combining circuits. The proposed complementary CMOS parallel push-pull (CCPP) amplifier gives an order of magnitude improvement in IP/sub 2/ than an NMOS common-source amplifier and single-balanced CCPP resistive mixer, which functions effectively as a double-balanced one, provides more than an order of magnitude better linearity in IP/sub 2/, and similar order of magnitude better local oscillator (LO)-IF and LO-RF isolations than NMOS counterparts. |
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