Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation |
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| Authors: | K Hayama K Takakura H Ohyama J M Rafí A Mercha E Simoen C Claeys |
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| Affiliation: | (1) Kumamoto National College of Technology, 2569-2 Nishigoshi, Kumamoto 861-1102, Japan;(2) Institut de Microelectrònica de Barcelona (CNM-CSIC), Campus UAB, 08193 Bellaterra, Spain;(3) IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;(4) E.E. Dept, KU Leuven, Belgium |
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| Abstract: | A new method for body potential estimation of ultra thin gate oxide fully-depleted silicon-on-insulator MOSFETs in accumulation mode operation is presented. The impact of the back gate voltage, gate length and drain voltage on the body potential is investigated. The magnitude of the Electron Valence Band gate tunneling-induced 2nd peak of the transconductance, characteristic of these ultra thin gate oxide FD SOI MOSFETs, is analyzed in terms of body potential changes and front gate characteristics shifts. Finally, a decrease of the body potential for strong accumulation back gate biases is revealed and discussed. |
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