| Abstract: | Abstract— Based on HI gas‐plasma etching (high‐density plasma‐assisted RIE), the activation energy for an ITO dry‐etching reaction was obtained. The value was calculated 35–40 kJ/mol for 20 sec from the reaction starting time. The reaction dead time is characteristic of the ITO dry‐etching process, but the reaction is relatively simple. Therefore, ITO dry‐etching technology, based on HI gas plasma, is useful in the the fabrication of LCDs, and was used in a recently developed Multi‐Coaxial‐Plasma‐Source (MCPS) dry etcher. |
