基于SOI的双极场效应晶体管

在分析了双极型晶体管和场效应晶体管各自的特点和不足后，介绍了一种既具有双极型晶体管较大电流容量和功率输出，又具有场效应晶体管高输入阻抗的电子器件——双极MOS场效应晶体管(BJMOSFET)，同时指出体硅BJMOSFET的阳极扩散区与衬底之间存在较大的漏电流，可产生较大的寄生效应。提出了一种新型固体电子器件——基于SOI的BJMOSFET，分析了其工作原理j与体硅BJMOSFET比较，由于SOI技术完整的介质隔离避免了体硅器件中存在的大部分寄生效应，使基于SOI的BJMOSFET在体效应、热载流子效应、寄生电容、短沟道效应和闩锁效应等方面具有更优良的特性。

BJMOSFET Based on SOI

After analyzing the advantage and disadvantage of the MOSFET and BJT a new kind of device BJMOSFET is introduced, which has large capacity of current and large power output just like the BJT, and the large input resistant just like (MOSFET.)At the same time, we point out that there is large leakage current between the anode and the insulator substrate in the bulk Si BJMOSFET, which causes many problems. A new solid electronic device-BJMOSFET based on SOI is introduced and its operating principle is analyzed.Compared with the bulk Si BJMOSFET, because of the buried oxide in the SOI device, it doesn't have most problems of the bulk Si device and the superiority of BJMOSFET based on SOI over bulk Si BJMOSFET is analyzed in the bulk effect,hot carrier effect,parasitic capacitance,short-channel effect and latch-up effect.