50nm SOI-DTMOS器件的性能

利用二维器件模拟软件ISE对5 0nm沟道长度下SOI DTMOS器件性能进行了研究,并与常规结构的SOI器件作了比较.结果表明,在5 0nm沟长下,SOI DTMOS器件性能远远优于常规SOI器件.SOI DTMOS器件具有更好的亚阈值特性,其亚阈值泄漏电流比常规SOI器件小2～3个数量级,从而使其具有更低的静态功耗.同时,SOI DTMOS器件较高的驱动电流保证了管子的工作速度,并且较常规SOI器件能更有效地抑制短沟道器件的穿通效应、DIBL及SCE效应,从而保证了在尺寸进一步减小的情况下管子的性能.对SOI DTMOS器件的物理机制进行了初步分析,揭示了其性能远优于常规结构的物理本质

50nm SOI-DTMOS Device Performances

The 50nm SOI-DTMOS device performances are researched and compared with the conventional SOI device by using ISE,the two-dimensional device simulation software ISE.The results show that at a gate length of 50nm the performances of SOI-DTMOS have much advantages over conventional SOI device.SOI-DTMOS has a better sub-threshold characteristics,much smaller sub-threshold leakage current,and thus lower static power.Furthermore,SOI-DTMOS has a comparatively high drive current guaranteeing the speed of the device.Compared with the conventional SOI device,SOI-DTMOS can effectively restrain the punch-through,DIBL,SCE effects,and thus keeps the good performance on further scaling-down.Simple analysis on the physical mechanism of SOI-DTMOS device and the physical characteristics accounting for its advantages.And the direction of further research,is pointed out.