Flexural vibrations of semiconductor wafers in the presence of a pulsed thermal excitation source

An analysis is made of the action of current pulses on a metal film lying on a semiconductor wafer. It is shown that the passage of current pulses of amplitude (1–7)×10¹⁰ A/m² and duration 50–200 μs across aluminum tracks excites sound. Experimental dependences of the energy of the flexural vibrations as a function of the duration and amplitude of the pulsed action were obtained. It was observed for the first time that the melting of a metal-semiconductor contact is accompanied by an abrupt increase in the energy of the flexural vibrations of the wafer. Pis’ma Zh. Tekh. Fiz. 25, 57–63 (March 12, 1999)