| 掺In GaAs晶体中的EL2缺陷及其热处理 |
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| 引用本文： | 谢自力.掺In GaAs晶体中的EL2缺陷及其热处理[J].半导体技术,1999,24(3):38-40,49. |
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| 作者姓名： | 谢自力 |
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| 作者单位： | 南京电子器件研究所,南京,210016 |
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| 摘 要： | 比较了掺Ｉｎ和非掺杂ＬＥＣ－ＧａＡｓ晶体中的ＥＬ２缺陷，分析了掺Ｉｎ量的不同与热处理过程的不同对ＬＥＣ－ＧａＡｓ晶体中ＥＬ２缺陷的影响。
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| 关 键 词： | 掺In 液封直拉GaAs EL2缺陷 热处理 |
EL2 Defect and Its Annealing in In-Doped GaAs Single Crystal |
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| Xie Zili.EL2 Defect and Its Annealing in In-Doped GaAs Single Crystal[J].Semiconductor Technology,1999,24(3):38-40,49. |
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| Authors: | Xie Zili |
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| Abstract: | In this
paper,the EL2 defects in In-doped and undoped LEC GaAs crystal have been compared.The
effect of different annealing processes on EL2 defects were analyzed.The different In
containing in GaAs and the effect of different annealing processes on EL2 have been
disscussed. |
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| Keywords: | In doping LEC GaAs EL2 defect Thermal annealing |
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