| CdTe单晶生长过程的分凝特性及其生长条件的选择 |
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| 引用本文： | 介万奇.CdTe单晶生长过程的分凝特性及其生长条件的选择[J].材料研究学报,1996,10(3):259-263. |
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| 作者姓名： | 介万奇 |
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| 作者单位： | 西北工业大学凝固技术国家重点实验室 |
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| 基金项目： | 航空科学基金;;国家教委优秀年轻教师基金 |
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| 摘 要： | 在Ｃｄ－Ｔｅ相图的基础出ＣｄＴｅ－Ｃｄ相图并定义其主要参数，讨论了高Ｃｄ的ＣｄＴｅ液体在结晶过程中的分凝特性及其生长条件对昌体中Ｔｅ固溶量的影响，进而维持平面生长界面所需的最小温度梯度。
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| 关 键 词： | 碲化镉 布里奇曼法 单晶生长 |
| 收稿时间： | 1996-06-25 |
| 修稿时间： | 1996-06-25 |
CHARACTERISTICS OF SOLUTE REDISTRIBUTION DURING CRYSTAL GROWTH OF CdTe AND THE SELECTION OF GROWTH PARAMETERS |
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| JIE Wanqi.CHARACTERISTICS OF SOLUTE REDISTRIBUTION DURING CRYSTAL GROWTH OF CdTe AND THE SELECTION OF GROWTH PARAMETERS[J].Chinese Journal of Materials Research,1996,10(3):259-263. |
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| Authors: | JIE Wanqi |
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| Affiliation: | JIE Wanqi(Stale Key Laboratory of Solidification Processing,Northwestern Polytechnical University)(Correspondent:JIE Wanqi,State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi'an ) |
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| Abstract: | From Cd-Te binary phase diagram,CdTe-Cd phase diagram and its parameters are obtained.By discussing the solute redistribution during CdTe crystal growth from CdTe solutions with different amount of extra Cd in Bridgman process,the solubility of Te in CdTe crystal is evaluated.The minimum temperature gradient for keeping planar liquid / solid interface is also studied. |
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| Keywords: | CdTe Bridgman single crystal growth Te solubility growth arameter |
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