Study of the intermediate layer at the <Emphasis Type="Italic">n</Emphasis><Superscript>+</Superscript>-CdS/<Emphasis Type="Italic">p</Emphasis>-CdTe interface期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Study of the intermediate layer at the n+-CdS/p-CdTe interface

Authors:	S. A. Muzafarova B. U. Aitbaev Sh. A. Mirsagatov K. Durshimbetov Zh. Zhanabergenov

Affiliation:	(1) Physicotechnical Institute, NPO Fizika solntsa, Academy of Sciences of Republic Uzbekistan, Tashkent, 700084, Uzbekistan;(2) Karakalpak State University, Nukus, 708004, Uzbekistan;(3) Karakalpak State Pedagogical Institute, Nukus, 708004, Uzbekistan

Abstract:	The effect of production conditions and subsequent stimulation by ultrasonic irradiation on the formation of a solid solution at the n-CdS/p-CdTe interface in solar cells has been investigated. The phase composition of the solid-solution transient layer was investigated by a nondestructive photoelectric method (measurement of the spectral distribution of photosensitivity in the gate and photodiode modes). It is shown that the phase composition and thickness of the intermediate CdTe_1?xS_x layer depend strongly on the heterostructure formation conditions.

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