Embedded-stripe GaAs-GaAlAs double-heterostructure lasers with polycrystalline GaAsP layers--I: Lasers with cleaved mirrors |
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| Authors: | Itoh K Asahi K Inoue M Teramoto I |
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| Affiliation: | Matsushita Electronics Corporation, Takatsuki, Osaka, Japan; |
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| Abstract: | We report a new type of embedded stripe laser in which low-order mode CW oscillation is successfully attained at room temperature. In order to achieve lateral current confinement, a high-resistivity polycrystalline GaAsP layer is formed around the mesa stripe by selective vapor-phase growth technology. It turns out that a stable single-mode operation is attained at an injected current up to several times the threshold value. |
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