Light emission from oxygen covered Al and Cu surfaces |
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Authors: | C S Lee Z M Lin Z M Yen and C H Lin |
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Affiliation: | Department of Physics, National Central University, Chungli 320, Taiwan, ROC |
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Abstract: | Ion beam induced light emission is used to investigate the sputtering yield, SO, of oxygen atoms on the surfaces of a polycrystalline copper and an Al(1 1 1) target. Under Ar+ and Ne+ ion bombardment of Al(1 1 1) and polycrystalline copper targets, spectral lines of Cu I and Al I emitting from sputtered excited atoms are measured as a function of the oxygen partial pressure, wavelength and beam energy. The light emission for two Al I lines (3082 and 3962 Å) and Cu I lines (3247 and 3274 Å) are proportional to the oxygen partial pressure ( 1×10?4 Torr). Above 2×10?4 Torr, the light intensities start to decrease which is consistent with other measurements. From saturated-oxygen covered target surfaces, light intensities of Al I and Cu I lines are measured as a function of time and oxygen partial pressures. The sputtering yields could be determined from the curves of spectral lines directly. For 10 and 20 keV Ar+ ions bombarding the copper surface, the oxygen sputtering yields are 0.34 and 0.22 (atoms/ion), respectively. The same copper target was bombarded by Ne+ ions at 5 and 10 keV, the oxygen sputtering yields are 0.87 and 0.59, respectively. For 10, 15, and 20 keV Ar+ bombarding an Al(1 1 1) target, the obtained sputtering yields are 0.44, 0.31, and 0.2 (atoms/ion), respectively. |
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Keywords: | BLE Ion–surface interaction Sputtering The sticking coefficient |
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