MAPbI3单晶光电探测器的制备及应用

采用逆温法生长得到了MAPbI3单晶,经过粗磨抛光处理后,作为靶材在其表面蒸镀了Au电极,制备了Au/MAPbI3/Au光电探测器,并对其光电性能进行了详细研究。在不同光照条件下的I-V性能测试结果表明,相同的偏压下MAPbI3单晶光电探测器均具有较好的光敏感性和探测性能。通过α能谱和飞行时间(TOF)技术研究并讨论了该探测器对α粒子的探测性能,并最终得到探测器中电子和空穴的电子迁移率和寿命乘积分别为5.6×10^-4和3.3×10^-4 cm^2/V,电子和空穴的迁移率分别为24.6和59.7 cm^2/(V·s)。实验结果表明,该探测器的探测能力与室温核辐射探测材料CdZnTe的相当,证实了逆温法生长的MAPbI3单晶具有优异的电荷传输性能,在室温辐射检测领域有巨大的潜力。

Preparation and Application of the MAPbI3Single Crystal Photodetector

The MAPbI3sigle crystal was grown by the temperature inversion method.After rough grinding and polishing,the Au electrode was evaporated on the surface of the single crystal as the target,and the Au/MAPbI3/Au photodetector was prepared.The photoelectric properties of the photodetector were studied in detail.The I-V performance test results under different lighting conditions show that MAPbI3single crystal photodetectors have better photosensitivity and detection performance at the same bias voltage.In addition,the detection performance ofαparticles was investigated and discussed by theαenergy spectra and the time of flight(TOF)technology,and eventually the product values of the electron mobility and life for the electron and hole in the detector were obtained,i.e.5.6×10^-4 cm^2/V and 3.3×10^-4 cm^2/V,respectively.The mobilities of the electron and hole are 24.6 cm2/(V·S)and 59.7 cm2/(V·S),respectively.The above experimental results indicate that the detection ability of the MAPbI3photodetector is comparable to that of the nuclear radiation detecting material CdZnTe at room temperature,confirming that the MAPbI3single crystal grown by the temperature inversion method has excellent charge-transfer performance and great potential in the field of the radiation detection at room temperature.