Single-shot thermal energy mapping of semiconductor devices with the nanosecond resolution using holographic interferometry |
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Authors: | Pogany D Dubec V Bychikhin S Furbock C Litzenberger A Groos G Stecher M Gornik E |
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Affiliation: | Inst. for Solid State Electron., Vienna Univ. of Technol., Austria; |
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Abstract: | A novel two-dimensional backside optical imaging method for thermal energy mapping inside semiconductor devices is presented. The method is based on holographic interferometry from the device backside and uses the thermo-optical effect. An image of the local thermal energy is obtained with 5-ns time resolution using a single stress pulse. The technique allows a unique recording of the internal device behavior. The method is demonstrated analyzing the nonrepetitive thermal and current flow dynamics in smart power electrostatic discharge (ESD) protection devices. A spreading of the current during the stress pulse is observed and explained by the effect of the negative temperature dependence of the impact ionization coefficient. |
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