Formation and study of buried SiC layers with a high content of radiation defects

Protons with energy E=100 keV were implanted with doses ranging from 2×10¹⁷ to 4×10¹⁷ cm^?2 into 6H-and 4H-SiC n-type samples at room temperature. The samples were subjected to various types of postimplantation heat treatment in the temperature range 550–1500°C. The parameters of the samples were studied by measuring the capacitance-voltage and current-voltage characteristics and by analyzing the photoluminescence spectra. Blistering on the surface of the sample is observed after annealing the samples at a temperature of 800°C only after implantation of protons with a dose of ≤3×10¹⁷ cm^?2. A decrease in the resistivity of the compensated layer sets in after annealing at a temperature of ～1200°C and is completed after annealing at a temperature of ～1500°C. A drastic decrease in the photoluminescence intensity is observed after implantation for all types of samples. Recovery of the photoluminescence intensity sets in after annealing at temperatures ≥800°C and is complete after annealing at a temperature of 1500°C.