Interlayer Coupling Induced Infrared Response in WS2/MoS2 Heterostructures Enhanced by Surface Plasmon Resonance |
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| Authors: | Guichao Wang Liang Li Weihao Fan Renyan Wang Shasha Zhou Jing‐Tao Lü Lin Gan Tianyou Zhai |
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| Affiliation: | 1. State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, P. R. China;2. School of Physics, Huazhong University of Science and Technology (HUST), Wuhan, P. R. China |
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| Abstract: | Infrared light detection is generally limited by the intrinsic bandgap of semiconductors, which suppresses the freedom in infrared light photodetector design and hinders the development of high‐performance infrared light photodetector. In this work, for the first time infrared light (1030 nm) photodetectors are fabricated based on WS2/MoS2 heterostructures. Individual WS2 and MoS2 have no response to infrared light. The origin of infrared light response for WS2/MoS2 comes from the strong interlayer coupling which shrinks the energy interval in the heterojunction area thus rendering heterostructures longer wavelength detection ability compared to individual components. Considering the low light absorption due to indirect bandgap essence of few layers WS2/MoS2 heterostructures, its infrared responsivity is further enhanced with at most ≈25 times but the fast response rate is maintained via surface plasmon resonance (SPR). Such an interlayer coupling induced infrared light response and surface plasmon resonance enhancement strategy paves the way for high‐performance infrared light photodetection of infinite freedom in design. |
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| Keywords: | infrared response interlayer coupling photodetection surface plasmon resonance WS2/MoS2 heterostructures |
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