MBE-grown ZnSSe thin films on ITO substrates for liquid-crystal light valve applications

The MBE growth of ZnSSe alloy thin films on ITO substrates using ZnS and Se sources was studied and various structural and opto-electronic properties of the as-grown thin films were characterised. The XRD rocking curves resulting from these films indicate that the as-grown polycrystalline ZnSSe thin films have a preferred orientation along (1 1 1) direction. The evaluated crystal sizes as deduced from the FWHM of the XRD layer peaks were found to show a strong growth temperature dependence with the optimised temperature at about 290°C. TEM measurements done on these thin films also indicate a similar growth temperature dependence. The TEM cross-sectional micrograph of the sample grown at the optimised temperature shows a well-defined columnar structure whose nucleation seems to be highly correlated with the ITO grains. UV responsivity as high as 0.01 A/W and more than three orders of magnitude in rejection power for wavelengths longer than 450 nm have been achieved. It was also found that the sample grown at the optimised temperature has the lowest resistivity of 4.3×10¹¹ Ω cm, which provides a good match with that of a liquid-crystal layer. These results indicate that MBE-grown ZnSSe thin film is a promising candidate as the photoconductive material of liquid-crystal light valves for UV imaging applications.