| 气压和偏流对高掺硼金刚石晶体性质的影响(英文) |
| |
| 引用本文： | 贾福超,白亦真,屈芳,孙剑,赵纪军,姜辛.气压和偏流对高掺硼金刚石晶体性质的影响(英文)[J].新型炭材料,2010,25(5). |
| |
| 作者姓名： | 贾福超 白亦真 屈芳 孙剑 赵纪军 姜辛 |
| |
| 作者单位： | 1. 大连理工大学,物理与光电工程学院,辽宁,大连,116023;大连理工大学,三束材料改性教育部重点实验室,辽宁,大连,116023
2. 锡根大学,材料工程研究所,德国,锡根保罗博纳茨街9-11,D-57076 |
| |
| 基金项目： | supported by the 973 Program(Grant No.2008CB617614)~~ |
| |
| 摘 要： | 采用热丝化学气相沉积法,改变工作气压和偏流,在硅基片上沉积了高掺硼金刚石膜。利用扫描电镜(SEM)、拉曼光谱和X射线衍射仪对沉积的金刚石膜表面形貌和结构进行表征。结果显示:当气体压强从3kPa降低到1.5kPa时,金刚石膜有较平的表面形貌和和较好的晶形,薄膜的晶体性质得到良好的改善。但是继续降气体压强,从1.5kPa到0.5kPa时,却呈现出相反的趋势。固定气体压强(1.5kPa),改变偏流,结果表明:适当的偏流(3A)可以改善掺硼金刚石的质量,偏流较高会导致薄膜中非金刚石相增多。
|
| 关 键 词： | 高掺硼金刚石膜 气体压强 偏流 热灯丝化学气相沉积 扫描电镜 X射线衍射仪 拉曼光谱 |
The influence of gas pressure and bias current on the crystallinity of highly boron-doped diamond films |
| |
| JIA Fu-chao,BAI Yi-zhen,QU Fang,SUN Jian,ZHAO Ji-jun,JIANG Xin.The influence of gas pressure and bias current on the crystallinity of highly boron-doped diamond films[J].New Carbon Materials,2010,25(5). |
| |
| Authors: | JIA Fu-chao BAI Yi-zhen QU Fang SUN Jian ZHAO Ji-jun JIANG Xin |
| |
| Abstract: | Highly boron-doped diamond(BDD)films were deposited by hot filament chemical vapor deposition on a silicon substrate with different gas pressures and bias currents.The surface morphology and the structure of the diamond films were analyzed by scanning electron microscopy,Raman spectroscopy,and X-ray diffraction.Results indicated that the quality of the highly BDD films tended to be improved when the gas pressure decreased from 3 to 1.5kPa,whereas they showed an opposite trend with a further decrease of the ... |
| |
| Keywords: | Highly boron-doped diamond film Gas pressures Bias currents HFCVD SEM XRD Raman |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
