单晶硅太阳电池发射极的模拟优化

针对传统p型衬底晶硅太阳电池,通过PCID数值计算,模拟了发射极扩散峰值浓度、方块电阻、结深等对电池性能的影响规律以及该规律与硅衬底电阻率之间的依赖关系,分析了其中所蕴含的作用机理.对于磷原子浓度梯度符合余误差分布的发射极,得到扩散制结的标准为:扩散峰值浓度介于1×10~(19)～5×10~(19)cm~(-3)之间,方块电阻在100Ω/□以上.尽管电池效率在衬底电阻率为1Ω·cm时最高,并随衬底电阻率的增大而明显下降,但上述发射极扩散标准基本保持不变.

OPTIMIZING THE DIFFUSED EMITTER FOR CRYSTALLINE SILICON SOLAR CELLS BY SIMULATION

For traditional crystalline silicon solar cells on p-type substrates, the dependence of the solar cell performance on the diffusion concentration, the sheet resistance and the junction depth of the emitter was studied by utilizing PC1D simulation, combining with the variation of the substrate resistivity. The influence mechanisms were analyzed. Design criteria of the diffused emitter were obtained. For the emitter with the P doping atoms diffusion following the Erfc distribution, the peak diffusion concentration should be in the range of 1 × 10~(19) - 5 × 10~(19)cm~(-3). And the sheet resistance should be above 100Ω/□. Although the efficiency of the solar cell will decrease while the substrate resistivity increases over 1Ω·cm, the above optimized criteria for the emitter is suitable for all the substrates.