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Highly efficient silicon light emitting diodes produced by doping engineering
Authors:Jiaming SUN    M.HELM    W.SKORUPA    B.SCHMIDT    A.MCKLICH
Affiliation:1. Key Laboratory of Weak Light Nonlinear Photonics Ministry of Education, Nankai University, Tianjin 300071, China
2. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01314, Germany
Abstract:
Keywords:silicon (Si) light emitting diodes  doping engineering  dislocation  modulation doping
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